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| 2SA778(K), 2SA778A(K) Silicon PNP Epitaxial Application High voltage medium speed switching Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA778(K), 2SA778A(K) Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SA778(K) -150 -150 -5 -50 200 150 -55 to +150 2SA778A(K) -180 -180 -5 -50 200 150 -55 to +150 Unit V V V mA mW C C Electrical Characteristics (Ta = 25C) 2SA778(K) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Collector cutoff current Symbol V(BR)CBO V(BR)CER I CBO Min Typ Max -- -- -1.0 -- -1.0 -- -1.0 2SA778A(K) Min Typ Max -- -- -- -1.0 -1.0 200 -1.0 V V pF MHz ns s s Unit V V A A A Test conditions I C = -50 A, IE = 0 I C = -50 A, RBE = 30 k VCB = -100 V, IE = 0 VCB = -150 V, IE = 0 VEB = -5 V, IC = 0 VCE = -3 V, I E = -15 mA I C = -15 mA, I B = -1 mA I C = -15 mA, I B = -1 mA VCB = -10 V, IE = 0, f = 1 MHz VCE = -3 V, I C = -15 mA VCC = -10.3 V I C = 10 IB1 = -10 I B2 = -10 mA VCC = -10 V, I C =-17 mA IB1 = -1mA, I B2 = -12 mA -150 -- -150 -- -- -- -- -- -- 100 -0.3 -180 -- -180 -- -- -- -- 40 -- -- -- -- -- -- -- -- -- -- 100 -0.3 Emitter cutoff current I EBO -- 30 -- -- -- -- -- -- -- DC current transfer ratio hFE Collector to emitter saturation voltage Base to emitter saturation voltage Collector output capacitance VCE(sat) VBE(sat) Cob -0.77 -1.0 -- 50 135 1.7 -- 10 -- -- -- 1.0 -0.77 -1.0 -- 50 135 1.7 -- 10 -- -- -- 1.0 Gain bandwidth product f T Turn on time Turn off time Storage time t on t off t stg 2 2SA778(K), 2SA778A(K) Switching Time Test Circuit Switching Time Test Circuit ton, toff Test Circuit D.U.T. 6k 6k 0.002 0.002 CRT 1k P.G. tr, tf 5ns PW 5s duty ratio = 50% tstg Test Circuit 510 D.U.T 0.1 2.4 k 50 - -3 V 50 ++ 50 - 0.002 0.002 0.1 CRT 16 P.G. tr, tf 15ns PW 5s duty ratio 10% 50 + 6V 50 -+ 50 - -10.3 V Unit R : C : F -10 V Unit R : C : F Response Waveform Response Waveform 90% tstg 10% td ton 90% toff 0 Input -13 V 0 Output 10% +7 V Input 0 0 Output 10% 90% 10% 10% tstg 3 2SA778(K), 2SA778A(K) Typical Output Characteristics (1) Maximum Collector Dissipation Curve Collector power dissipation Pc (mW) 300 Collector Current IC (mA) -40 -50 -0.9 -0.8 -0.7 -1 .0 P C = -0.6 -0.5 20 0 m W -0.4 -30 200 -0.3 -0.2 -0.15 -0.1 -20 100 -10 -0.05 mA IB = 0 0 50 100 150 Ambient Temperature Ta (C) 0 -1 -2 -3 -4 -5 Collector to Emitter Voltage VCE (V) Typical Output Characteristics (2) -0.5 Collector Current ICBO (nA) Collector Current IC (mA) -300 Collector Cutoff Current vs. Collector to Base Voltage 125 -0.4 -4 -100 100 -0.3 -3 -30 75 -10 -3 -1.0 -0.3 50 -0.2 -2 -0.1 -1 A IB = 0 Ta = 25C 0 -40 -80 -120 -160 -200 Collector to Emitter Voltage VCE (V) 0 -40 -80 -120 -160 -200 Collector to Base Voltage VCB (V) 4 2SA778(K), 2SA778A(K) DC Current Transfer Ratio vs. Collector Current VCE = -3 V 75 50 Collector to Emitter Saturation Voltage vs. Collector Current Collector to emitter saturation voltage VCE (sat) (V) -2.0 IC = 10 IB 140 DC current transfer ratio hFE 120 -1.6 100 25 -1.2 0 80 Ta = -25 C -0.8 60 -0.4 40 -1 -2 -5 -10 -20 Collector Current IC (mA) -50 0 -0.1 -0.2 -0.5 -1.0 -2 -5 -10 -20 Collector Current IC (mA) -50 Collector output capacitance Cob (pF) Emitter input capacitance Cib (pF) Base to Emitter Saturation Voltage vs. Collector Current -0.9 Base to emitter saturation voltage VBE (sat) (V) IC = 10 IB -25 0 Input and Output Capacitance vs. Voltage 12 10 8 6 Cob (IE = 0) 4 2 0 -0.5 -1.0 -2 -5 -10 -20 -50 Collector to Base Voltage VCB (V) Emitter to Base Voltage VEB (V) Cib (IC = 0) f = 1 MHz -0.8 -0.7 25 50 5C =7 -0.6 Ta -0.5 -0.4 -0.1 -0.2 -0.5 -1.0 -2 -5 -10 -20 Collector Current IC (mA) -50 5 2SA778(K), 2SA778A(K) Gain Bandwidth Product vs. Collector Current 60 Gain bandwidth product fT (MHz) VCE = -3 V 50 Switching time t (s) 40 30 20 10 0.02 0 -0.5 -1.0 -2 -5 -10 -20 Collector Current IC (mA) -50 0.01 -0.5-1.0 -2 -5 -10 -20 -50 Collector Current IC (mA) Switching Time vs. Collector Current 5 IC = 10 IB1 = -10 IB2 2 1.0 0.5 0.2 0.1 0.05 td ton tstg toff 6 Unit: mm 4.8 0.3 3.8 0.3 2.3 Max 0.5 0.1 0.7 0.60 Max 12.7 Min 5.0 0.2 0.5 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 (1) Conforms Conforms 0.25 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
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